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MA08509D
10W Power Amplifier Die (8.0-11 GHz)
FEATURES
* * * Broadband Performance 32% Typical Power Added Efficiency 50 Input/Output Impedance
Preliminary Release
VDD
V DD
*
Self-Aligned MSAG(R) MESFET Process
RF IN RF OUT
VGG
Description
The MA08509D is a three stage MMIC power amplifier fabricated using M/A-COM's mature GaAs Self-Aligned MSAG(R) MESFET Process. This product is fully matched to 50 ohms on both the input and the output.
Maximum Ratings (T
Rating
A
= 25 C unless otherwise noted)
Symbol
Value
DC Drain Supply Voltage DC Gate Supply Voltage
RF Input Power Junction Temperature
Storage Temperature
VDD VGG PIN TJ TSTG
12 -6 500 150 -40 to +85
Unit Vdc
Vdc mW C C
ELECTRICAL CHARACTERISTICS VDD = 10.0 V, VGG = -4 V, PIN = 18 dBm, TA = 25 C
Characteristic Symbol Min Typ Max Unit
Frequency Output Power, saturated Power Gain, saturated
Gain Flatness Over Frequency @ Pin = 18 dBm
PSAT GSAT PAE S11 2, 3 Rth
8.0 39.0 20 25
Power Added Efficiency (POUT=PSAT) Return Loss Harmonics Output Stage Thermal Resistance @ Pin = 18 dBm
40 22 +/- 1.0 32 -6 -30 5.4
11.0 41.5
-4
GHz dBm dB dB % dB dBc C/W
Specifications subject to change without notice.
902179 D
North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
10W Power Amplifier Die (8-11 GHz) TYPICAL CHARACTERISTICS (VDD = 10 V, VGG = -4 V, PIN = 18 dBm)
42
MA08509D
32 28 24
40
38
Pout (dBm)
20
36
Gain (dB)
8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11
16 12 8
34
32
4
30
0 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11
Frequency (G Hz)
Frequency (GHz)
Figure 1. Output Power vs. Frequency
45 40 35 30 PAE (%) 25 20 15 10 -20 5 0 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11 -5 0
Figure 2. Gain vs. Frequency
Return Loss(dB)
-10
-15
-25 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11 Frequency (GHz)
Frequency (GHz)
Figure 3. Power Added Efficiency vs. Frequency
Figure 4. Input Return Loss vs. Frequency
Specifications subject to change without notice.
902179 D
North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
10W Power Amplifier Die (8-11 GHz) APPLICATION INFORMATION
5000 pF
MA08509D
Assembly:
Chip dimensions: 4.6 mm x 4.6 mm, .003" thickness. Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable.
VGG
5000 pF 0.1 F
VDD
VDD
5000 pF 0.1 F
100 pF
RF IN
0.1 F
50
50
RF OUT
100 pF
VGG
5000 pF 0.1 F 5000 pF 0.1 F
Biasing:
VDD VDD
1. User must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
Figure 5. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing
Specifications subject to change without notice.
902179 D
North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
5000 pF
0.1 F

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